ISSP2019: Abstract Submission
Instructions to Authors
Authors are requested to read carefully the instructions below, before preparing their abstracts.
- Deadline: January 15, 2019
- Language: English
- Please use standard ASCII characters only. Others may not be treated properly.
Title, Authors' names and Institutional Affiliations
- Use add/delete buttons for multiple entries.
- Please use full names rather than initials.
- The "Affiliation No." field of the author's entry should be filled with the corresponding number of the Affiliation table. If an author belongs to multiple affiliations, please input those numbers as a comma-separated list.
- Please include institutional affiliation and country.
- Abstract should not exceed 400 words.
- Prepare the abstracts in the following order: purpose, methods, results and summary.
- Abstract should include the background and intent of your study to highlight the signficance of your work.
Crystal growth of epitaxially grown PbTiO3 thin films on miscut SrTiO3 substrate
Authors and Affiliations
|First Name||Middle Name||Last Name||Affiliation|
|Affiliation No.||Affiliation Name (Please include country)|
|1||Research Institute of Innovative technology for the Earth (RITE), Japan|
|2||Central Research laboratories, Matsushita Electric Ind., Co. Ltd., Japan|
Thin films of (001) PbTiO3 (PT), 5 to 200nm in thickness, were grown by sputtering on miscut (001) SrTiO3 (ST) substrate with miscut angle of 1.7 degree at 600 degC. Since the growth temperature of 600 degC is higher than Curie temperature of PT, the crystal form of PT is essentially cubic. However, at the growth temperature the PT thin films will be deformed from cubic to tetragonal form due to two dimensional compressive force arising from the small lattice of ST substrate. The deformed crystal structure was quenched during the cooling stage at the deposition. The sputtered PT thin films showed a single domain-single crystal perovskite structure through a large area. The surface was extremely smooth with surface roughness less than 3 nm for the film thickness of 200 nm. The electron microscopic analysis suggested that the film growth was governed by a step-flow model showing a layer growth. It is found that the layer growth is stable at low oxygen partial pressure during the sputtering deposition. High oxygen partial pressure induces three dimensional film growth under two dimensional nucleation ...
Deadline: January 15, 2019